?005 fairchild semiconductor corporation 1 www.fairchildsemi.com f ebruary 2005 RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz features single positive-supply operation and low power and shut- down modes 42% wcdma ef?iency at +28 dbm average output power 1920?980 mhz 39% wcdma ef?iency at 27.5 dbm average output power 1850?910 mhz meets umts/wcdma performance requirements in both umts bands compact lead-free compliant lcc package (3.0 x 3.0 x 1.0 mm nominal) internally matched to 50 ? and dc blocked rf input/output general description the RMPA2265 power ampli?r module (pam) is designed for wcdma applications in both the 1850?910 and 1920?980 mhz bands. the 2 stage pam is internally matched to 50 ? to minimize the use of external components and features a low- power mode to reduce standby current and dc power con- sumption during peak phone usage. high power-added ef? ciency and excellent linearity are achieved using fairchild s ingap/gaas heterojunction bipolar transistor (hbt) process. device functional block diagram (paddle ground on package bottom) 4 3 2 18 7 6 5 dc bias control input match output match vcc2 rf out gnd vref rf in vcc1 mmic (top view) vmode gnd
2 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz absolute ratings 1 note: 1. no permanent damage with only one parameter set at extreme limit. other parameters set to typical values. electrical characteristics (1920 to 1980 mhz) 1 notes: 1. all parameters met at t c = +25?, v cc = +3.4v, v ref = 2.85v and load vswr 1.2:1, unless otherwise noted. 2. all phase angles 3. guaranteed by design symbol parameter ratings units v cc1 , v cc2 supply voltages 5.0 v v ref reference voltage 2.6 to 3.5 v v mode po w er control voltage 3.5 v p in rf input power +10 dbm t stg storage temperature -55 to +150 ? symbol parameter min typ max units comments f operating frequency 1920 1980 mhz wcdma operation gp power gain 26 28 db po = +28dbm, vmode = 0v 26 db po = +16dbm, vmode 2.0v po linear output power 28 dbm vmode = 0v 16 dbm vmode 2.0v p aed paed (digital) @ +28dbm 42 % vmode = 0v p aed (digital) @ +16dbm 9 % vmode 2.0v p aed (digital) @ +16dbm 25 % vmode 2.0v, vcc = 1.4v itot high power total current 440 ma po = +28dbm, vmode = 0v low power total current 120 ma po = +16dbm, vmode = 2.0v adjacent channel leakage ratio a clr1 ?.00mhz offset 1920?980 mhz -40 dbc po = +28dbm, vmode = 0v -42 dbc po = +16dbm, vmode 2.0v a clr2 ?0.00mhz offset 1920?980 mhz -54 dbc po = +28dbm, vmode = 0v -66 dbc po = +16dbm, vmode 2.0v general characteristics vswr input impedance 2.0:1 nf noise figure 4 db rx no receive band noise power -142 dbm/ hz po +28dbm, 2110 to 2170 mhz 2fo ?5fo harmonic suppression -50 dbc po +28dbm s spurious outputs 2, 3 -60 dbc load vswr 5.0:1 ruggedness with load mismatch 3 10:1 no permanent damage tc case operating temperature -30 85 ? dc characteristics iccq quiescent current 45 ma vmode 2.0v iref reference current 5 ma po +28dbm icc(off) shutdown leakage current 1 5 ? no applied rf signal
3 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz electrical characteristics (1850 to 1910 mhz) 1 notes: 1. all parameters met at t c = +25?, v cc = +3.4v, v ref = 2.85v and load vswr 1.2:1, unless otherwise noted. 2. all phase angles 3. guaranteed by design recommended operating conditions symbol parameter min typ max units comments f operating frequency 1850 1910 mhz wcdma operation gp power gain 26 28 db po = +27.5dbm, vmode = 0v 26 db po = +16dbm, vmode 2.0v po linear output power 27.5 dbm vmode = 0v 16 dbm vmode 2.0v p aed paed (digital) @ +27.5dbm 39 % vmode = 0v p aed (digital) @ +16dbm 9 % vmode 2.0v p aed (digital) @ +16dbm 25 % vmode 2.0v, vcc = 1.4v itot high power total current 420 ma po = +27.5dbm, vmode = 0v low power total current 120 ma po = +16dbm, vmode = 2.0v adjacent channel leakage ratio a clr1 ?.00mhz offset 1850?910 mhz -40 dbc po = +27.5dbm, vmode = 0v -42 dbc po = +16dbm, vmode 2.0v a clr2 ?0.00mhz offset 1850?910 mhz -54 dbc po = +27.5dbm, vmode = 0v -66 dbc po = +16dbm, vmode 2.0v general characteristics vswr input impedance 2.0:1 nf noise figure 4 db rx no receive band noise power -139 dbm/hz po +27.5dbm, 1930 to 1990 mhz 2fo ?5fo harmonic suppression -50 dbc po +27.5dbm s spurious outputs 2, 3 -60 dbc load vswr 5.0:1 ruggedness with load mismatch 3 10:1 no permanent damage tc case operating temperature -30 85 ? dc characteristics iccq quiescent current 45 ma vmode 2.0v iref reference current 5 ma po +27.5dbm icc(off) shutdown leakage current 1 5 ? no applied rf signal symbol parameter min typ max units f operating frequency 1850 1980 mhz v cc1 , v cc2 supply voltage 3.0 3.4 4.2 v v ref reference voltage operating shutdown 2.7 0 2.85 3.1 0.5 v v v mode bias control voltage low-power high-power 1.8 0 2.0 3.0 0.5 v v p out linear output power (low-power) 1920?980 mhz (high power) 1850?910 mhz (high power) +16 +28 +27.5 dbm dbm dbm t c case operating temperature -30 +85 ?
4 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz performance data: 1920 to 1980 mhz RMPA2265 3x3 wcdma pa , freq=1.95ghz vcc=3.4v, vref=2.85v, vmode=0v 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 27.0 27.2 27.4 27.6 27.8 28.0 pout (dbm) gain (db) RMPA2265 3x3 wcdma pa , freq=1.95ghz vcc=3.4v, vref=2.85v, vmode=0v 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 27.0 27.2 27.4 27.6 27.8 28.0 pout (dbm) pae (%) RMPA2265 3x3 wcdma pa , freq=1.95ghz vcc=3.4v, vref=2.85v, vmode=0v -47.0 -46.0 -45.0 -44.0 -43.0 -42.0 -41.0 -40.0 -39.0 -38.0 -37.0 27.0 27.2 27.4 27.6 27.8 28.0 pout (dbm) aclr1 (dbc) RMPA2265 3x3 wcdma pa , freq=1.95ghz vcc=3.4v, vref=2.85v, vmode=0v -60.0 -59.0 -58.0 -57.0 -56.0 -55.0 -54.0 -53.0 -52.0 -51.0 -50.0 27.0 27.2 27.4 27.6 27.8 28.0 pout (dbm) aclr2 (dbc) RMPA2265 3x3 wcdma pa vcc=3.4v, vref=2.85v, vmode=0v, pout=28dbm 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 1920 1950 1980 frequency (mhz) gain (db) RMPA2265 3x3 wcdma pa vcc=3.4v, vref=2.85v, vmode=0v, pout=28dbm 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 1920 1950 1980 frequency (mhz) pae (%) RMPA2265 3x3 wcdma pa vcc=3.4v, vref=2.85v, vmode=0v, pout=28dbm -50.0 -48.0 -46.0 -44.0 -42.0 -40.0 -38.0 -36.0 -34.0 -32.0 -30.0 1920 1950 1980 frequency (mhz) aclr1 (dbc) RMPA2265 3x3 wcdma pa vcc=3.4v, vref=2.85v, vmode=0v, pout=28dbm -65.0 -63.0 -61.0 -59.0 -57.0 -55.0 -53.0 -51.0 -49.0 -47.0 -45.0 1920 1950 1980 frequency (mhz) aclr2 (dbc)
5 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz performance data: 1850 to 1910 mhz efficiency improvement applications in addition to high-power/low-power bias modes, the efficiency of the pa module can be significantly increased at backed-off rf power levels by dynamically varying the supply voltage (vcc) applied to the amplifier. since mobile handsets and power amplifiers frequently operate at 10?0 db back-off, or more, from maximum rated linear power, battery life is highly dependent on the dc power consumed at antenna power levels in the range of 0 to +16dbm. the reduced demand on transmitted rf power allows the pa supply voltage to be reduced for improved efficiency, while still meeting linearity requirements for wcdma modulation with excellent margin. high-efficiency dc-dc converters are now available to implement switched-voltage operation. with the pa module in low-power mode (vmode = 2.0v) at +16dbm output power and supply voltages reduced from 3.4v nominal down to 1.2v, power-added efficiency is more than doubled from 9 percent to 25 percent (vcc = 1.2v) while maintaining a typical aclr1 of -40dbc and aclr2 of less than -54 dbc. operation at even lower levels of vcc supply voltage are possible with a further restriction on the maximum rf output power. dc turn on sequence: 1. vcc1 = vcc2 = 3.4v (typical) 2. vref = 2.85v (typical) 3. high-power: vmode = 0v (pout > 16dbm) low-power: vmode = 2.0v (pout < 16dbm) RMPA2265 3x3 wcdma pa at us-pcs freq vcc=3.4v, vref=2.85v, vmode=0v, pout=27.5dbm 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0 31.0 32.0 33.0 1850 1880 1910 frequency (mhz) gain (db) RMPA2265 3x3 wcdma pa at us-pcs freq vcc=3.4v, vref=2.85v, vmode=0v, pout=27.5dbm 35.0 36.0 37.0 38.0 39.0 40.0 41.0 42.0 43.0 44.0 45.0 1850 1880 1910 frequency (mhz) pae (%) RMPA2265 3x3 wcdma pa at us-pcs freq vcc=3.4v, vref=2.85v, vmode=0v, pout=27.5dbm -50.0 -48.0 -46.0 -44.0 -42.0 -40.0 -38.0 -36.0 -34.0 -32.0 -30.0 1850 1880 1910 frequency (mhz) aclr1 (dbc) RMPA2265 3x3 wcdma pa at us-pcs freq vcc=3.4v, vref=2.85v, vmode=0v, pout=27.5dbm -65.0 -63.0 -61.0 -59.0 -57.0 -55.0 -53.0 -51.0 -49.0 -47.0 -45.0 1850 1880 1910 frequency (mhz) aclr2 (dbc)
6 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz evaluation board layout materials list evaluation board schematic qty item no. part number description vendor 11 g657691-1 v1 pc board fairchild 22 #142-0701-841 sma connector johnson 73 #2340-5211tn terminals 3m ref 4 assembly, RMPA2265 fairchild 35 grm39x7r102k50v 1000pf capacitor (0603) murata 35 (alt) ecj-1vb1h102k 1000pf capacitor (0603) panasonic 26 c3216x5r1a335m 3.3? capacitor (1206) tdk 17 grm39y5v104z16v 0.1? capacitor (0603) murata 17 (alt) ecj-1vb1c104k 0.1? capacitor (0603) panasonic a/r 8 sn63 solder paste indium corp. a/r 9 sn96 solder paste indium corp. xytt 2265 z 2 8 7 5, 6 vcc2 (package base) 50 ohm trl 50 ohm trl 3.3 f vref 3.3 f 1000 pf 1000 pf 1000 pf 0.1 f 3 v mode 9 4 vcc1 1 xytt 2265 z
7 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz pa ck ag e outline signal description pin # signal name description 1 vcc1 supply voltage to input stage 2 rf in rf input signal 3 vmode high power/low power switch 4 vref reference voltage 5 gnd ground 6 gnd ground 7 rf out rf output signal 8 vcc2 supply voltage to output stage 9 gnd ground z xytt 2265 z xytt 2265 top view front view bottom view i/o 1 indicator 1 2 3 3.00 1.10mm max. 4x r.25mm 2.60mm 0.20mm 0.40mm 0.40mm 0.40mm 0.10mm 0.10mm detail a typ. back side solder mask see detail a 1.00mm 1.00mm mm sq. +.100 ?050 4 4 3 2 2 1 1 5 6 7 8 8 7 6 5 9
8 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz applications information caution: this is an esd sensitive device. precautions to avoid permanent device damage: cleanliness: observe proper handling procedures to ensure clean devices and pcbs. devices should remain in their original packaging until component placement to ensure no contamination or damage to rf, dc and ground contact areas. device cleaning: standard board cleaning techniques should not present device problems provided that the boards are properly dried to remove solvents or water residues. static sensitivity: follow esd precautions to protect against esd damage: ? properly grounded static-dissipative surface on which to place devices. static-dissipative floor or mat. ? properly grounded conductive wrist strap for each person to wear while handling devices. general handling: handle the package on the top with a vacuum collet or along the edges with a sharp pair of bent tweezers. avoiding damaging the rf, dc, and ground contacts on the package bottom. do not apply excessive pressure to the top of the lid. device storage: devices are supplied in heat-sealed, moisture-barrier bags. in this condition, devices are protected and require no special storage conditions. once the sealed bag has been opened, devices should be stored in a dry nitrogen environment. device usage: fairchild recommends the following procedures prior to assembly. dry-bake devices at 125? for 24 hours minimum. note: the shipping trays cannot withstand 125? baking temperature. assemble the dry-baked devices within 7 days of removal from the oven. during the 7-day period, the devices must be stored in an environment of less than 60% relative humidity and a maximum temperature of 30? if the 7-day period or the environmental conditions have been exceeded, then the dry-bake procedure must be repeated. solder materials & temperature profile: reflow soldering is the preferred method of smt attachment. hand soldering is not recommended. reflow profile ramp-up: during this stage the solvents are evaporated from the solder paste. care should be taken to prevent rapid oxidation (or paste slump) and solder bursts caused by violent solvent out-gassing. a typical heating rate is 1-2?/sec. pre-heat/soak: the soak temperature stage serves two purposes; the flux is activated and the board and devices achieve a uniform temperature. the recommended soak condition is: 120?50 seconds at 150?. reflow zone: if the temperature is too high, then devices may be damaged by mechanical stress due to thermal mismatch or there may be problems due to excessive solder oxidation. excessive time at temperature can enhance the formation of inter-metallic compounds at the lead/board interface and may lead to early mechanical failure of the joint. reflow must occur prior to the flux being completely driven off. the duration of peak reflow temperature should not exceed 10 seconds. maximum soldering temperatures should be in the range 215 220?, with a maximum limit of 225?. cooling zone: steep thermal gradients may give rise to excessive thermal shock. however, rapid cooling promotes a finer grain structure and a more crack-resistant solder joint. the illustration below indicates the recommended soldering profile. solder joint characteristics: proper operation of this device depends on a reliable void-free attachment of the heat sink to the pwb. the solder joint should be 95% void-free and be a consistent thickness. rework considerations: rework of a device attached to a board is limited to reflow of the solder with a heat gun. the device should not be subjected to more than 225? and reflow solder in the molten state for more than 5 seconds. no more than 2 rework operations should be performed. recommended solder re?w pro?e 0 20 40 60 80 100 120 140 deg (?) time (sec) 10 sec 183? 1?/sec 1?/sec soak at 150? for 60 sec 45 sec (max) above 183? 160 180 200 220 240 060 120 180 240 300
9 www.fairchildsemi.com RMPA2265 rev. g RMPA2265 dual band wcdma power edge power ampli?r module 1850 to 1910 mhz and 1920 to 1980 mhz disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy f airchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production intellimax? isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? p acman? f ast ? f astr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i15 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? f act? f act quiet series? pop? power247? poweredge? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? s tealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? unifet? vcx? across the board. around the world.? the power franchise ? programmable active droop?
|
